The kinetics of tungsten carbide formation was investigated for tungsten coatings on CFC with a molybdenum interlayer as they are used in the ITER-like Wall in JET. The coatings were produced by combined magnetron sputtering and ion implantation. The investigation was performed by preparing focused ion beam cross sections from samples after a heat treatment in argon atmosphere. Baking of the sa...

We report a regime of ion beam sputtering that occurs for sufficiently steep slopes. High slopes propagate over large distances without dissipating the steepest features. Both the propagation velocity and the dynamically selected slope are universal, independent of the details of the initial shape of the surface. The resulting behavior can be understood as the propagation of a shock front that ...

The angular-resolved sputtering yield of Be by D + was predicted and then measured. An ion beam at 100, 300, 500 and 700 eV from a Colutron ion source was focused onto S-65 C grade Be samples. The sample was exposed in situ to a 350 V dc D plasma to remove oxide, load the surface with D and more-nearly simulate the surface which would be found during steady-state fusion device operating conditi...

The interaction of plasmas with surfaces is dominated by synergistic effects between incident ions and radicals. Film growth is accelerated by the ions, providing adsorption sites for incoming radicals. Chemical etching is accelerated by incident ions when chemical etching products are removed from the surface by ion sputtering. The latter is the essence of anisotropic etching in microelectroni...

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, whi...

A hybrid molecular dynamics model has been applied for modeling impacts of Ar and decaborane clusters, with energies ranging from 25 to 1500 eV/atom, impacting Si surfaces. Crater formation, sputtering, and the shapes of craters and rims were studied. Our simulation predicts that on a Si(1 0 0), craters are nearly triangular in cross-section, with the facets directed along the close-packed (1 1...

In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluat...

The magnetic properties of 1 nm thick in-plane anisotropic Co ultrathin film on ZnO(0001) were investigated through successive 500 eV nitrogen-ion sputtering. Magneto-optical Faraday effects were used to observe the evolution of the ion-irradiated sample in longitudinal and perpendicular magnetic fields. The ferromagnetic phase of the initial in-plane anisotropic fcc β-Co phase transformation t...

The sputtering of low temperature rare-gas and molecular-gas solids by ion bombardment occurs through two different routes. Collision cascades initiated by momentum transferring collisions of ions with atoms of the solid are effective as they are in metals. The apparent surface binding energy is, however, much lower than the sublimation energy and there is a substantial low energy component to ...

587 Abstract— The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.