نتایج جستجو برای: ion sensitive field effect transistors sensor
تعداد نتایج: 2870819 فیلتر نتایج به سال:
Articles you may be interested in A simple drain current model for single-walled carbon nanotube network thin-film transistors Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template Appl. Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate Complementary voltage inv...
A charge-transfer complex was modified on the graphite paste electrode for making a sensitive dissolved oxygen sensor. It was composed of copper with two ligands of phenanthroline and 1,2-dicyano-1,2-dithiolethane. Because of the low redox potential of the core ion and the pull and repulsive effect from the ligands, the redox of modified complex toke place under lower potential and it could sel...
A pH sensor fabricated on a single chip by an unmodified, commercial 0.6m CMOS process is presented. The sensor comprises a circuit for making differential measurements between an ion-sensitive field-effect transistor (ISFET) and a reference FET (REFET). The ISFET has a floating-gate structure and uses the silicon nitride passivation layer as a pH-sensitive insulator. As fabricated, it has a la...
A novel screen-printing fabrication method was used to prepare organic electrochemical transistors (OECTs) based on poly(3,4-ethylenedioxythiophene) doped with polysterene sulfonate (PEDOT:PSS). Initially, three types of these screen-printed OECTs with a different channel and gate areas ratio were compared in terms of output characteristics, transfer characteristics, and current modulation in a...
Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...
We report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS2 layers. The Au-MoS2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the d...
Articles you may be interested in Publisher's Note: " Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing " [Appl. pH sensing properties of graphene solution-gated field-effect transistors Detection of sulfur dioxide gas with graphene field effect transistor Appl. Probing transconductance spatial variation...
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