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The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnelinjects carriers from a ferromagnetic emitter into the Si...

Investigations of Tunneling for Field Effect Transistors

We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

The combination of their electronic properties and dimensions makes carbon nanotubes ideal building blocks for molecular electronics. However, the advancement of carbon nanotube-based electronics requires assembly strategies that allow their precise localization and interconnection. Using a scheme based on recognition between molecular building blocks, we report the realization of a self-assemb...

Novel type of a field effect transistor (FET) is described. A metallic channel of a metallic nanotube FET is proposed to be switched ON/OFF by applying electric fields of a local gate. Very inhomogeneous electric fields may lower the nanotube symmetry and open a band gap, as shown by tight–binding calculations.