In this proposed work we are applying valuable power gating schemes to FinFET based Schmitt trigger to enhance its performance by reducing the leakage current in standby mode (off-state mode). The power gating schemes like Sleep Transistor approach and Multi-Threshold CMOS (MTCMOS) and Double-Threshold CMOS (DTCMOS) have been analysed and simulated which shows the tremendous reduction in the le...

The computer simulation program of a practical scale reverse electrodialysis process has been developed based on the program for saline water electrodialysis. The program is applied to compute the performance of an industrial-scale reverse electrodialysis stack (effective membrane area S = 1 m × 1 m = 1 m2, cell pair number N = 300 pairs). The stack operatingconditions are optimized. Seaw...

The shrinking MOSFET has an increasing subthreshold leakage current caused by various mechanisms. For example, the band-to-band tunneling (BTBT) current from drain to channel results in a large subthreshold leakage current in a 50nm MOSFET [1]. Recently, the double-gate (DG) fully depleted (FD) MOS was investigated. In the DG-MOS, the channel region is intrinsic or lightly doped silicon so that...

Leakage current reduction is of primary importance as the technology scaling trends continue towards deep sub-micrometer regime. One of the leakage mechanisms which contribute significantly to power dissipation is the Gate Induced Drain Leakage (GIDL). GIDL sets an upper limit on the VLSI MOSFET scaling and may even lead to device breakdown. Thus, in order to improve performance, static power c...

There is a demand for portable devices like mobiles and laptops etc. and their long battery life. For high integrity CMOS VLSI circuit design in deep submicron regime, feature size is reduced according to the improved technology. Reduced feature size devices need low power for their operation. Reduced power supply, reduces the threshold voltage of the device. Low threshold devices have improved...

Ti1-xSixO2 dielectric thin films were prepared by cosputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenk...

This paper presents the design, implementation and testing of a transducer to measure monitor in real time leakage currents on high-voltage insulators. The new proposed has particularity not affecting insulation capacity insulator strings can be installed without need de-energize power system. is made up toroidal current transformer with high permeability magnetic core, an amplifier circuit, ou...