Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. With the use of low-temperature scanning tunneling microscopy, we find that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band gap engineering, which is dominated by different buckled structures in...

Semiconductor nanocrystals are promising for use in cheap and highly efficient solar cells. A high efficiency can be achieved by carrier multiplication (CM), which yields multiple electron-hole pairs for a single absorbed photon. Lead chalcogenide nanocrystals are of specific interest, since their band gap can be tuned to be optimal to exploit CM in solar cells. Interestingly, for a given photo...

A 2.5 monolayer (ML) thick graphene film grown by chemical vapor deposition of thermally dissociated C(2)H(4) on MgO(111), displays a significant band gap. The apparent six-fold low energy electron diffraction (LEED) pattern actually consists of two three-fold patterns with different 'A' and 'B' site diffraction intensities. Similar effects are observed for the LEED patterns of a 1 ML carbon fi...

From 1965 onwards lot of developments and simulation works have been done in the field of IMPATT diode to improve its power output, efficiency and frequency range of operation using low band gap material like Si, GaAs, InP etc. In this paper a comprehensive study has been made on IMPATT diodes based on high band gap materials, GaN (Wz) and SiC (4H) operating at Ka, V and W-band respectively rel...

A novel donor-acceptor-type polymer with a low band-gap that alternates electron-rich thienylenevinylene groups with electron-deficient diketopyrrolopyrrole (DPP) units (PETVTDPP) has been synthesized by Pd-catalyzed Stille cross-coupling polymerization. The polymer shows a broad absorption band of wavelengths that range from 330 to 900 nm, and a low band-gap value of 1.43 eV. The field-effect ...

In this paper, we report on the successful synthesis of three individual modes, HE11 , TE01, and TE 02 for transmission in photonic band gap fibers at near infrared wavelengths. We measure the propagation losses of the HE,1 and TE0 1 modes both inside and outside the band gap of the fiber, and show that the TE0 1 is indeed the lowest loss mode, and is less lossy and has a much wider band gap th...

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gaple...

We report the first experimental demonstration of a TE-polarization photonic band gap (PBG) in a 2D isotropic hyperuniform disordered solid (HUDS) made of dielectric media with a dielectric index contrast of 1.6:1, very low for PBG formation. The solid is composed of a connected network of dielectric walls enclosing air-filled cells. Direct comparison with photonic crystals and quasicrystals pe...