The MAX2530 receiver RF front-end IC, using Maxim's advanced SiGe process, was originally designed for cellular-band and PCS band operation. For 450MHz CDMA, the NF (noise figure) and the IIP3 (input third-order intercept) of the low noise amplifier (LNA) are very critical in considering the sensitivity, and the single-tone desensitization effect. This technical note gives the tuning method and...

Analog and RF circuit performance in single-chip transceivers can severely suffer from coupling of digital switching noise to the silicon substrate. To predict this performance degradation, a deeper understanding of the impact of substrate noise is absolutely necessary. Using measurements, this impact is studied as the cascade of an attenuation through the substrate from the source of substrate...

In the field of solar radio, the high performance solar radio receiver which has high sensitivity, large dynamic range is necessary to observe the radio storm fine structure. The low noise floor solar radio receiver can meet the observation request. By the theory analysis of the radio storm receiver’s noise floor and combining with the characteristic of solar radio storm, the paper submits a me...

This paper presents a triple-band low-noise amplifier (LNA) fabricated using 0.18 ?m Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses double-peak load network with switched component to accomplish the operation. Moreover, noise reduction substrate resistor ameliorate performance is presented. Noise of 1.5 dB can be achieved at 2.5 GHz without additional dc power and extra ma...

This paper presents a DC–11GHz CMOS low noise amplifier (LNA) for software-defined radio (SDR). The broadband performance is extended to cover the spectrum from near DC to 11GHz by adopting extra inductors with modified resistive feedback, folded current reuse topology. Bandwidth extension is proposed by inserting pole splitting, interstage and LC ladder inductors. A source follower jointly act...

This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare 35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance (i.e., combined li...

Abstract This article mainly focuses on important quantum phenomenon called entanglement arising the nonlinearity property. study uses a unique approach in which transistor effect (third-order nonlinearity) entangled microwave photons are created cryogenic low-noise amplifier (LNA). For analysis, Hamiltonian of designed LNA (containing two coupled oscillators) is derived, and then, using dynami...

Abstract This paper describes the design of Low Noise Amplifier (LNA) circuits with different types of matching circuits at the input side and output side at 6 GHz. This paper compares the results of all possible combinations of ‘T’ and ‘L’ type matching circuits. The designed circuit is simulated with Advanced Design System (ADS) software. Each circuit is simulated for, with and without stabil...

This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, series inductor-based stability enhancement technique was utilized to improve reverse isolation and performance of mitigate effect parasitic capacitance GaN HEMT device. To validate concept three-stage ...

The low noise amplifier (LNA) plays an important role in the radiofrequency receiver front-ends, its main function is to amplify weak receiving signal from ground noise, as well improving sensitivity. For LNAs which operate frequencies higher than S-band, printed circuit board (PCB) with high cost substrate materials have been used almost designs so far, thus increasing total price of entire un...