The dielectric and conduction behavior of SrTiO3 thin films deposited on a SrTiO3 single-crystal substrate is studied. Without dc bias, an obvious dielectric ‘‘defect mode’’ in the dielectric loss is observed in the temperature range of ;100–200 K; however, no noticeable corresponding dielectric constant peak is observed. By applying a high dc bias ~>40 kV/cm!, a dielectric constant peak with f...

For V-band applications, this paper presents a fully embedded multi-layer dielectric waveguide filter (DWGF) with very low insertion loss and small size, which does not need any more assemblies such as flip-chip bonding and bond wires. The top and bottom plane are grounded, and therefore, although we make a metal housing, there will be no resonance occurrences. Especially, the proposed structur...

Bentonite-derived monolithic materials with and without distributed nanoscale turbostratic carbon, obtained by hot-pressing organobentonite and bentonite particles, respectively, in the absence of an added binder, exhibit exceptionally high dielectric loss while the electrical conductivity is relatively low. The combination of high dielectric loss and relatively low conductivity has not been pr...

A new temperature-frequency converter based on the variation of the dielectric permittivity of the Liquid Crystal (LC) material with temperature has been demonstrated. Unlike other temperature sensors based on liquid crystal processing optical signals for determining the temperature, this work presents a system that is able to sense temperature by using only electrical signals. The variation of...

The electrical conduction phenomena, dielectric response and microstructure have been discussed in sintered silicon nitride ceramics at different temperature and frequencies. Microstructure and phase of the sintered samples was investigated by Scanning Electron Microscope (SEM) and X-ray diffractometer (XRD). The electrical conductivity, dielectric constant and dielectric loss increases exponen...

The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (e0), dielectric loss (e00), dielectric loss tangent (tan d) and real and imaginary part of electrical modulus (V0 and M) of the (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance–voltage (C–V) and conductance–voltage (G/w...

The low dielectric losses of an isotopically pure single crystal 28Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order 2 × 106 (dielectric loss ~5 × 10-7) at high powers, degrading to 7 × 105 (dielectric loss ~1.4 × 10-6 at single photon energy. A very low-loss nar...

Using LTCC (Low temperature co-fired ceramics) system in wireless packaging applications is wide used today. The properties requirements for wireless applications are requiring low loss at high frequencies and good characteristic comparative to cost. Several designs of packaging systems are presented in various microwave packaging applications such antenna. The relative curves of dielectric con...

Metal oxide-based transistors can be fabricated by low-cost, large-area solution processing methods, but involve a trade-off between low processing temperature, facile charge transport and high-capacitance/low-voltage transistor gates. We achieve these simultaneously by fabricating zinc oxide and sodium-incorporated alumina (SA) thin films with temperature not exceeding 200 to 250 °C using aque...

The temperature dependence of static dielectric susceptibility of a strongly coupled dipolar system is calculated with self consistent mean fluctuation field approximation. Results are qualitatively in good agreement with, quantum paraelectric, SrTiO3 in the low temperature regime; and identify the system as a “gaped quantum paraelectric” near its quantum critical point. Quantum scaling along w...