Thermal annealing effects on the characteristics of intrinsic defects in unintentionally doped 4H–SiC were investigated. The 4H–SiC samples were prepared by Low-Pressure Chemical Vapor Deposition (LPCVD) technique. Results show that there is only one Electron Spin Resonance (ESR) peak and a broad, from green to yellow, photoluminescence (PL) band were detected. These results are attributed to t...

Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of lowpressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth ...

Nanometer-size Si quantum dots (Si-QDs) with and without Ge core were prepared on thermally-grown SiO2 in a self-assembling manner by controlling the early stages of low pressure chemical vapor deposition (LPCVD). The surface potential changes in individual dots caused by charging or discharging of one electron or a few as were measured by using a Kelvin probe technique in an atomic force micro...

In-situ boron doped LPCVD polycrystalline silicongermanium (poly SiGe) layers are deposited from SiH4 and GeH4 with 0.2% diborane (B2H6) in argon (Ar) as dopant precursor at 430 C and 0.2 mbar. The characterized layers show very low tensile stress (12 MPa) for the diborane mixture flow of 50 sccm for fixed SiH4 and GeH4 flow. However, an increase in diborane mixture flow to 100 sccm at the same...

We report in this paper on the latest research results of microcrystalline (μc-Si:H) silicon solar cells fabricated in a commercial Oerlikon Solar (former UNAXIS) KAI-S single-chamber PECVD reactor (substrate size up to 35 cm x 45 cm) driven at an excitation frequency of 40.68 MHz. The cell structure consists of a stack of glass/ front-TCO / p-i-n μc-Si:H solar cell / back-contact. Our “in-hous...

In this paper, a low surface roughness and highly homogenous TiO2 layer was deposited by Atomic Layer Deposition (ALD) and used as an evanescent waveguide for biomedical sensing applications. Anastomosis is an operation to continue an organ like colon, bowel, pancreas etc. If there is leakage in during an anastomosis surgery (often indicated by a high bacteria concentration), it probably will c...

Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP)...

Several 3-D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However...

The RadFETs discussed in this paper are based on our [2] dual dielectric design of SiN over SO, The RadFETs were fabricated at the Micrel Corp. in San Jose, CA. to specifications provided by the authors. Micrel was able to use their standard p-MOSFET process with the addition of a Low Pressure Chemical Vapor Deposition (LPCVD) SIN deposition after gate oxidation to fabricate the RadFETs. Micrel...

A planar Bi–Sb multijunction thermal converter was fabricated on the LPCVD Si3N4/SiO2/Si3N4-diaphragm, prepared by silicon bulk micromachining, which thermally isolated a bifilar Ptor NiCr-heater and the hot junctions of a Bi–Sb thermopile from the silicon substrate. The voltage responsivity, the ac–dc transfer difference, and the fluctuations of the output thermoelectric voltage and heater res...