A new technique for the realisation of soft morphological filters based on the majority gate algorithm is presented in this paper. A pipelined systolic array architecture suitable to perform soft morphological filtering is also presented. The processing times of the proposed hardware structure do not depend on the data window size and the required silicon area is linearly related to the number ...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Since 1979 various papers and have been published on modeling the gate dielectric using Time Dependent Dielectric Breakdown (TDDB) testing. There are primarily 2 models used, the linear E field model and the 1/E field model. These are based on different failure kinetics and both predict vastly different lifetimes for the dielectric. As a result the majority of I.C. manufacturers used the 1/E mo...

This paper reports on a survey of the mammals of the Golden Gate Highlands National Park, Republic of South Africa. Fifty-seven species are mentioned, the majority recorded through material or sight records. Those species which may occur in the Park, as deducted from their overall distribution ranges, or from other indirect observations such as spoor or droppings, are considered as well. Habita...

Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) in high frequency applications where switching power losses are dominant. They can be paralleled b...

We propose a threshold-logic gate device consisting of subthreshold MOSFET circuits. The device performs threshold-logic operation, using a technique of current addition and subtraction. To examine the operation of the device, we designed sample subsystems, adders, based on majority logic and confirmed their operation by computer simulation. The device has a simple structure and operates at low...