A fully CMOS integrated radio frequency (RF) transceiver for wireless sensor networks in sub-GHz ISMband applications is implemented and measured. The IC is fabricated in 0.18-μm CMOS technology and packaged in LPCC package. The fully monolithic transceiver consists of a receiver, a transmitter and a RF synthesizer with on-chip VCO. The chip fully complies with the IEEE 802.15.4 WPAN standard i...

A 4 bit very low power and low incoming signal analog to digital converter (ADC) using a double sampling switched capacitor technique, designed for use in CMOS monolithic active pixels sensor readout, has been implemented in 0.35μm CMOS technology. A nonresetting sample and hold stage is integrated to amplify the incoming signal by 4. This first stage compensates both the amplifier offset effec...

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitan...

A highly integrated Ka band front-end receiver is presented. The proposed front-end receiver is developed for a Ka band passive imaging system. The design adopts single-stage heterodyne architecture at 2 GHz intermediate frequency (IF). Further, a two-layer planar technology is adopted for compact realization. The top layer of the front-end comprises of two monolithic microwave integrated circu...

—This paper presents the design of a highly linear broadband power amplifier (PA) operating from 200MHz to 3GHz for Long Term Evolution (LTE) pico-cell base station. The monolithic microwave integrated circuit (MMIC) PA is realized with 0.25-μm Enhancement Mode Pseudomorphic High Electron Mobility Transistor (E-pHEMT) process. The broadband PA employs a novel dual feedback technique to achieve...

Generation of millimeter-wave electronic signals and power is required for highfrequency communication links, RADAR, remote sensing and other applications. However, in the 30 to 300 GHz mm-wave regime, signal sources are bulky and inefficient. All-optical generation of mm-wave signals promises to improve efficiency to as much as 30 to 50 percent with output power as high as 100 mW. All of this ...

The development of numerical techniques now permits us to analyze complex structures such as dielectric resonator filters and planar passive elements for coplanar monolithic microwave integrated circuits. In this paper, we describe a novel method for designing dielectric resonator filters. Then a Chebychev band pass filter is designed by coaxially placing high-Q TM01Q dielectric resonators ...

Surface micromachining is characterized by the fabrication of micromechanical structures from deposited thin films. Originally employed for integrated circuits, films composed of materials such as low-pressure chemical-vapor-deposition polycrystalline silicon, silicon nitride, and silicon dioxides can be sequentially deposited and selectively removed to build or “machine” three-dimensional stru...

This work summarizes the recent progress towards a Terabaud electronic-plasmonic circuit integration platform. The conventional (2D), flip-chip and monolithic electronic-photonic integrated (EPIC) platform are compared side-by-side. novel plasmonic-electronic approach is introduced discussed with respect to advantages challenges of predominant photonic electronic technologies. A 222 GBd OOK pla...