This paper presents results of a Ka-band VSAT Ground Terminal MMIC chipset developed in a cost reduction context. The first one, a Low Level Multifunction designed for up-conversion with high gain driver, exhibits a 17dB conversion gain with an associated P1dB output power close to +18dBm. The second one, a High Power Amplifier with embedded power detection, delivers 2W RF output power associat...

Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applicatio...

A new type of compact microstrip line photonic band gap(PBG) structure employing T-type microstrip line for filter is presented. A miniature band rejection filter with four cells is simulated, fabricated, and measured. The filter with four proposed PBG structure exhibits band rejection characteristics (lower than -10dB from 23GHz~32GHz). The center frequency of stop-band is at 28GHz. The period...

A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than –12 dBm between 150and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180and 220 GHz. Good fundamental reject...

This paper reports a novel MMIC balanced sub-harmonic cold FET mixer for MVDS applications using 0.15mm GaAs pHEMT. The mixer, which includes a LO buffer amplifier, was optimized for highly linear upconversion performance in the 42-43.5GHz RF band, 19.520.5GHz LO band and 2.45-3.45 GHz IF band. A dedicated simulation method has been developed to optimize conversion loss and determine optimum ma...

Direct-carrier modulation is an attractive technique for low-cost high-performance radar transceivers. In this paper, it is shown that, when the technique is applied to a generic homodyne radar architecture, the signaling waveform can be software adapted without requiring any hardware modifications. The key circuit in this novel software radar is a -band monolithic – vector modulator employing ...

In this paper the benefits of using highly integrated millimeter-wave FMCW radar systems for industrial and security imaging applications are discussed. A 240 GHz wideband transceiver MMIC with on-chip antennas is presented and first non destructive testing measurements of packed hazelnut chocolate are shown. The radar system covers the frequency band from 204GHz to 265GHz.

Using MMICs in phased-array applications above 20 GHz requires complex RF and control signal distribution systems. Conventional waveguide, coaxial cable, and microstrip methods are undesirable due to their high weight, high l o s s , limited mechanical flexibility and large volume. bution in MMIC phased array antennas, is optical fiber. Presented are potential system architectures and their ass...

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art...

INTRODUCTION RAPID advancement of semiconductor integratedcircuit technology has reduced the cost of mobile telecommunication terminals year by year. The global systems for mobile communications (GSM),1) which was standardized mainly by European countries, has enhanced the large scale integration of radio-frequency circuits because mobile telecommunication systems of European countries do not r...