Progress in CMOS device technology has motivated the design of high-performance analog integrated circuits in standard CMOS processes. In particular, the high speed of submicron CMOS devices make them attractive for a variety of analog applications, including data converters, switched capacitor circuits, and low noise amplifiers [1,2,16]. However, recent reports have indicated that the measured...

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...

A simple, general, yet realistic MOSFET model, namely the nth power law MOSFET model, is introduced. The model can express I -V characteristics of short-channel MOSFET's at least down to 0.25-pm channel length and resistance inserted MOSFET's. The model evaluation time is about 1 / 3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single ...

The steady miniaturization of the conventional MOSFET resulted in continuous improvement in integratedcircuit cost and functionality. Planar bulk MOSFET designs face many challenges as they are being scaled down. A segmentedchannel MOSFET (SegFET) device design combines the benefits of both planar bulk MOSFETs and thin-body transistor structures. The salient feature of this device is that the c...

Performance of n-type implant free In0.25Ga0.75As MOSFETs with Ga2O3 dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes an advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction tra...

Rev. Abstract The most recent version (C2MTM) of Silicon Carbide (SiC) devices is used in a Zero Voltage Switching (ZVS) converter application. A 1200V, 160mohm SiC MOSFET from Cree Inc. is used to design a high-frequency ZVS LLC resonant fullbridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFET, which has lower junction capacitance and low-on-state resistor compared to a s...

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthr...

One of effort to overcome the planar MOSFET’s limit is super-junction technology in high voltage power MOSFET. This technology can dramatically reduce both on-resistance and gate charge, which is usually a trade-off. With smaller parasitic capacitances, the super-junction MOSFETs have extremely fast switching characteristics and therefore reduced switching losses. Naturally fast switching behav...

The phenomenal success of CMOS technology, and, then the progress of the information technology, can be attributed without any doubt to the scaling of the MOS transistor, which has been pushed during more than thirty years to increasingly levels of integration and per‐ formances. Then, MOSFETs have been fabricated always smaller, denser, faster and cheaper in order to provide ever more powerful...

This dissertation discusses the theory of single-amplifier biquadratic filters (SABs) and their implementation as CMOS video-frequency filters. It shows that building filters as cascades of single-amplifier biquadratic MOSFET–C sections is a viable alternative to using biquadratic Gm–C filter sections. The advantage of MOSFET–C SABs is that they typically use less chip area than a Gm–C filter w...