The recent emergence of wurtzite-type nitride ferroelectrics such as Al1-xScxN has paved the way for introduction all-epitaxial, all-wurtzite-type ferroelectric III-N semiconductor heterostructures. This paper presents first in-depth structural and electrical characterization an epitaxial heterostructure by investigating sputter deposited solid solutions with x between 0.19 0.28 grown over dope...

Adsorption of NO2 molecule on pristine and N-doped TiO2 anatase nanoparticles have been studied using the density functional theory (DFT) technique. The structural properties (such as bond lengths and bond angles) and the electronic properties (such as density of states, band structures and atomic partial charges) have been computed for considered nanoparticles. The result...

Electron paramagnetic resonance ~EPR! and optically detected magnetic resonance ~ODMR! experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5310 to 5.0310 cm. The samples were also characterized by secondary-ion-mass spectroscopy ~SIMS!, temperature-dependent Hall effect, and low-temperature photoluminescence ~PL! measurements. EPR at 9 GHz on the conductive fil...

Phonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long t...

In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...

Density functional theory calculations were carried out to study the interaction of heroin molecule with pristine and N-dopedTiO2 anatase nanoparticles. The oxygen atom of heroin molecule was found to be the binding site on the heroin molecule. In contrast, the binding site of TiO2 nanoparticle was positioned over the fivefold coordinated titanium atoms. The results showed that the adsorption e...

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and t...