نتایج جستجو برای: n and p
تعداد نتایج: 17103262 فیلتر نتایج به سال:
A novel oligo(p-phenylenevinylene)(OPV)-fullerene dyad, with strong intermolecular pi-pi interactions between the donor groups, led to improvements in the fill factor and power conversion efficiency of dyad-based solar cells of up to 0.44 and 1.28%, respectively, which are the highest values reported for dyad-based solar cells to date.
(1) Background: the broadcast is an outdated fertilization method with a low fertilizer-utilization rate and environmental problems, which seriously restricts development of agriculture. (2) Methods: Under machine-transplanted rice side-deep (MRSF) mode, five treatments were applied: 0 cm (D0), 5 (D5), 7.5 (D7.5), 10 (D10), comprising four different depths fertilization, no (CK). The yield, acc...
A detailed study of the elementary p(p,pπ)n reaction is presented using the delta isobar model. In this model, in the first step one of the two protons in the initial state gets excited to ∆. This, in the second step, decays into a nucleon and a pion. For the pp→N∆ step the parametrized form of the DWBA t-matrix of Jain and Santra, which reproduces most of the available data on pp→n∆, is used. ...
Magnetic skyrmions are topologically protected nanoscale objects, which are promising building blocks for novel magnetic and spintronic devices. Here, we investigate the dynamics of a skyrmion driven by spin wave in magnetic nanowire. It is found that (i) the skyrmion is first accelerated and then decelerated exponentially, (ii) it can turn L-corners with both right and left turns, (iii) it alw...
We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such a...
X-ray photoelectron spectroscopy (XPS) is used to follow some of the electrical properties of a segmented silicon photodetector, fabricated in a p-n-p configuration, during operation under various biasing configurations. Mapping of the binding energy position of Si2p reveals the shift in the position of the junctions with respect to the polarity of the DC bias applied. Use of squared and triang...
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