Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-sili...

Here, we present the results of the resistive response of tungsten trioxide nanowire (mat-like, nanowire networks) and nanoparticle thin films subjected to N2O gas in the temperature range of 373–773 K. The nanowire mats exhibited an order of magnitude higher response in the resistivity change compared to that of nanoparticle films at temperatures above 523 K. Nanowire mats also exhibited relat...

TiO2 anatase nanowires have been prepared by a hydrothermal process followed by post-heat treatment in air. TiO2 nanoparticle/TiO2 nanowire composite electrodes were prepared for dye-sensitized solar cells (DSC) in order to improve light-to-electricity conversion efficiency. The TiO2 NP/TiO2 NW composite cells showed higher DSC performance than ordinary nanoparticle cells and fully nanowire cel...

Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with ...

We report direct coupling of plasmonic and photonic nanowires using ultracompact near-field interaction. Photon-plasmon coupling efficiency up to 80% with coupling length down to the 200 nm level is achieved between individual Ag and ZnO nanowires. Hybrid nanophotonic components, including polarization splitters, Mach-Zehnder interferometers, and microring cavities, are fabricated out of couple...

Some of the fundamental problems of ultra-small MOSFETs beyond sub-10nm channel length are the electrostatic limits, source-to-drain tunnelling, carrier mobility degradation, process variations, and static leakage. The trend toward ultra-short gate length MOSFETs re‐ quires a more and more effective control of the channel by the gate leading to new device architecture. It appears that non-class...

We report the selective functionalization of uniform and heterostructured nanowires with self-assembled monolayers (SAMs) of (3-mercaptopropyl)trimethoxysilane (MPTMS). The wires were grown electrochemically in anodic aluminum oxide (AAO) templates. Selective deposition and removal of SAMs during nanowire growth permits the decoration of specific regions of the surface along the length of the n...

Three-dimensional topological insulator (3D TI) nanowires display various interesting magnetotransport properties that can be attributed to their spin-momentum-locked surface states such as quasiballistic transport and Aharonov-Bohm oscillations. Here, we focus on the of a 3D TI nanowire with gated section forms an electronic Fabry-P\'erot (FP) interferometer tuned act surface-state filter or e...