Most of the applications of the nanostructures dependent on the morphologies which affects the opto-electronics properties. This research article provides a pathway of guiding optical properties like band-gap and fluorescence properties by controlled growth of nano-rods, flowers, -needles ortubes without external chemical doping, by simple hydrothermal method by controlling over synthesis param...

Self-consistent numerical calculation and photoluminescence (PL) measurements have been used to investigate the temperature dependence of the optical Stark e ect in n-doped GaAs/AlGaAs single asymmetric quantum wells (SAQWs), grown by molecular beam epitaxy. In the low-temperature regime (5 to 40 K) a remarkable blue shift (9.8 meV) is observed in the PL peak energy, as the optical excitation i...

Titania (TiO2) is frequently used in photovoltaic and photocatalytic applications, despite the fact that its main optical absorption occurs only at ∼4 eV. Absorption across the band gap of 3 eV is dipole-forbidden in rutile TiO2. By means of first-principles theoretical spectroscopy calculations, we demonstrate that alloying with TiS2 introduces an absorption band into the fundamental gap of Ti...

The most significant process for optical coating is variant of vacuum deposition. Zinc sulphide having direct and large band gap which is use in opto electronics. By using ZnS material in thermal evaporation technique and characterizing the minimum reflectance and maximum transmittance in visible wavelength and energy gap increases with increasing thickness having direct and large band gap. Whe...

The high optical transparency glycine maelate crystals were grown by slow evaporation technique at room temperature. The grown crystal was subjected to optical and thermal studies. The optical studies ascertained high optical transparency and cut off wavelength was found to be 361 nm imperative for nonlinear applications. The optical constants, extinction coefficient, refractive index, optical ...

We present the results of optical studies of the properties of InxGa12xN epitaxial layers (0,x ,0.2) grown by metalorganic chemical vapor deposition. The effects of alloying on the fundamental band gap of InxGa12xN were investigated using a variety of spectroscopic techniques. The fundamental band-gap energies of the InxGa12xN alloys were determined using photomodulation spectroscopy measuremen...

Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS2, WS2, WSe2 and MoSe2 exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts, sensors and valleytronic components. Unfortunately, the direct band gap only occurs for mono-layered STMD...

In this paper, the structural parameters, energy bands structure, density ofstates and charge density of HgSe in the Zincblende(B3) phase have been investigated.The calculations have been performed using the Pseudopotential method in theframework of density functional theory (DFT) by Quantum Espresso package. Theresults for the electronic density of states (DOS) show tha...

Pbi_xFexS (x — 0:25, 0.50, 0.75) films were grown from an acidic chemical bath. Nanoparticle films were structurally characterized by XRD and TEM. Optical band gap of films is observed to vary from 1.65 to 1.42 eV with increase in their iron concentration from x — 0:25 to 0.75 in the films. Increased optical band gap of the ternary films compared to the estimated bulk value is attributed to qua...

Cadmium Sulphide (CdS) nanoparticles were prepared using microemulsion method using cadmium chloride as cadmium source and sodium sulphide as sulphur source. The obtained nanoparticles structures were characterized by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) whereas optical characterization was done by Ultra Violet-Visible absorption. XRD result shows that CdS nanopart...