نتایج جستجو برای: optoelectronic characterization

تعداد نتایج: 381618  

2012
José Figueiredo Bruno Romeira Thomas Slight Charles Ironside

Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter based on a visible or near-infrared light source, whose carrier is modulated by the information sign...

2014
Vítor Silva Manuel A. Vieira Paula Louro Manuel Barata Manuela Vieira

In this study we demonstrate the basic AND, OR and NOT logical functions based on SiC technology. The device consists of a p-i'(a-SiC:H)-n/p-i(aSi:H)-n heterostructure with low conductivity doped layers. Experimental optoelectronic characterization of the fabricated device shows the feasibility of tailoring channel bandwidth and wavelength by optical bias through illumination at the back and fr...

2014
Rodolfo Araneo Antonio Rinaldi Andrea Notargiacomo Fabiano Bini Marialilia Pea Salvatore Celozzi Franco Marinozzi Giampiero Lovat

Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are ...

2015
Yan Ping Wang Antoine Letoublon Tra Nguyen Thanh Mounib Bahri Ludovic Largeau Gilles Patriarche Charles Cornet Nicolas Bertru Alain Le Corre Olivier Durand

This study is carried out in the context of III-V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. Bu...

2007
J. C. Rueda D. Chana K. Contreras R. Coello M. Lomer

An alarm system as extrinsic sensor on optical fibers for detecting and controlling inflammable liquids based on thermosensitive proprieties of the PNIPAAm hydrogel is presented. The changes on the optical proprieties of the PNIPAAm with the temperature (being its LCST 32oC), induce abrupt changes on the light intensity and they act as an alarm signal, which is transmitted by optical fibers and...

2011
R Palacios P Formentin E Martinez-Ferrero J Pallarès LF Marsal

An efficient method based in template wetting is applied for fabrication of ordered Poly(9,9-dioctylfluorene) (PFO) nanopillars with β-phase morphology. In this process, nanoporous alumina obtained by anodization process is used as template. PFO nanostructures are prepared under ambient conditions via infiltration of the polymeric solution into the pores of the alumina with an average pore diam...

2005
Janice A. Hudgings

Temperature profiling is of substantial interest in improving thermal design of thermoelectric, electronic and optoelectronic devices. We demonstrated previously the utility of thermal profiling using thermocouples as a non-invasive characterization method for various components of photonic integrated circuits, such as lasers [1] and absorbers [2]. By spatially profiling the heat exchange of a ...

Journal: :Nanotechnology 2012
F Limbach C Hauswald J Lähnemann M Wölz O Brandt A Trampert M Hanke U Jahn R Calarco L Geelhaar H Riechert

Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electrolum...

2001
E. Kymakis G. A. J. Amaratunga

We report the optoelectronic properties occurring in single-walled carbon nanotubes ~SWNTs!— conjugated polymer, poly~3-octylthiophene! composites. Composite films were drop or spin cast from a solution on indium–tin oxide ~ITO! and quartz substrates and studied using absorption spectroscopy and electrical characterization methods. Diodes ~Al/polymer-nanotube composite/ ITO! with a low nanotube...

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