The tunneling effect through a thin HfO2 layer enables CsPbBr3/HfO2/Si heterostructure photodetector with enhanced optoelectronic performance. In article number 2100279, Yu Zhang and co-workers demonstrate that the performance of device can be modulated both Vds Vgs, providing flexibility for different applications.

2D Buffer Strategy In article number 2209880, Zhiqiang Liu, Jinmin Li, Xiaoyan Yi, and co-workers review the progress, challenges, prospects of mechanically transferable III-nitride based on a buffer strategy its applications in nitride electronic optoelectronic devices. This provides new paradigm for semiconductor preparation dimension novel device design.