نتایج جستجو برای: orbital defect

تعداد نتایج: 135081  

2016
Alberto Deganello

Small defects resulting from tumor ablation can be successfully managed with primary closure (i.e., limited excisions within the oral cavity), sometimes can be left to heal for secondary intention (transoral oropharyngeal/laryngeal/hypopharyngeal resections) or can be resurfaced using skin grafts or small local flaps, but in the majority of the cases the resulting defect requires a flap transpo...

Journal: :journal of physical & theoretical chemistry 2013
somayyeh ghasemlou h. aghaie

the density of state and the natural bond orbital calculations were carried out to study theoxidation of co on au14 nano cluster through two different mechanisms and determining the bestmechanism for the reaction. chemisorption of o2 and co on the nano cluster led to change in energy,density of state and its thermodynamic properties. we calculated the energy band gap between thehighest occupied...

2014
Vincenzo Parente Gabriele Campagnano Domenico Giuliano Arturo Tagliacozzo Francisco Guinea

The scattering of Dirac electrons by topological defects could be one of the most relevant sources of resistance in graphene and at the boundary surfaces of a three-dimensional topological insulator (3D TI). In the long wavelength, continuous limit of the Dirac equation, the topological defect can be described as a distortion of the metric in curved space, which can be accounted for by a rotati...

2004
Wojciech Kaminski Pavel Jelinek R. Pérez Fernando Flores José Ortega

We present a theoretical analysis of the atomic and electronic structure of Si-substitutional defects on the a-Sn/Si(1 1 1)( ffiffiffi 3 p ffiffiffi 3 p ) surface. We use a first-principles DFT local-orbital method and analyze Si-defects on a large Sn/Si(1 1 1) surface unit-cell, corresponding to a defect concentration as low as 3.7%. We also calculate the theoretical STM images, and compare wi...

Journal: :ACS nano 2016
Nicholas R Jungwirth Hung-Shen Chang Mingde Jiang Gregory D Fuchs

Point defects in wide bandgap semiconductors are promising candidates for future applications that necessitate quantum light sources. Recently, defect-based single photon sources have been observed in ZnO that are very bright and remain photoactive from 4.5 K to room temperature. Despite several investigations, the structure and electronic states of these emitters remain unknown. In this work, ...

Journal: :Physical chemistry chemical physics : PCCP 2017
Bolong Huang Dengfeng Peng Caofeng Pan

We unraveled the mechanisms of transition metal-doped mechanoluminescent materials through a case study of CaZnOS. We found that the native point defect levels in Cu or Mn-doped CaZnOS system acted as energy relay centers for luminescence energy transfer. In combination with native point defect levels, discussed in a previous study [Phys. Chem. Chem. Phys., 2016, 18, 25946], we found that phosp...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2012
P Partovi-Azar A Namiranian

It has been shown that the two different orientations of Stone-Wales (SW) defects, i.e. longitudinal and circumferential SW defects, on carbon nanotubes (CNTs) result in two different electronic structures. Based on density functional theory we have shown that the longitudinal SW defects do not open a bandgap near the Fermi energy, while a relatively small bandgap emerges in tubes with circumfe...

Journal: :Physical review. B, Condensed matter 1996
Phillips Sandler

We derive here a stability condition for a local moment in the presence of an interacting sea of conduction electrons. The conduction electrons are modeled as a Luttinger liquid in which chirality and spin are coupled. We show that an Anderson-U defect in such an interacting system can be transformed onto a nearly-Fermi liquid problem. We find that correlations among the conduction electrons st...

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