A new self-assembly concept is introduced to form large and pristine films (15 cm in diameter) of reduced graphene oxide (RGO). The resulting film has different degrees of polarity on its two different sides due to the characteristic nature of the self-assembly process. The RGO film can be easily transferred from a glass substrate onto water and a polymer substrate after injection of water mole...

Through simulations, this work explores the effects of conducting, semiconducting, and insulating substrates on the absorption of infrared radiation by radiative polaritons in oxide layers with thicknesses that range from 30 nm to 9 μm. Using atomic layer deposition, oxide layers can be formed in the nanometer scale. Our results suggest that the chemistry and conductivity of the substrate dete...

The retention of nitrous oxide in samples of nitrous oxide in air held in disposable plastic syringes, glass syringes and custom-made nylon film bags was studied by means of gas chromatography at intervals of 90 min, 24, 48 and 120 h after filling the containers. After 24 h the nylon bags retained a mean concentration of 94.5% of the original concentration of nitrous oxide. The disposable plast...

A room temperature cathodic arc deposition technique is used to produce high-mobility ZnO thin films for low voltage thin-film transistors (TFTs) and digital logic inverters. All-oxide, fully transparent devices are fabricated on alkali-free glass and flexible polyimide foil, exhibiting high performance. This provides a practical materials platform for the low-temperature fabrication of all-oxi...

A mechanism of CO oxidation by a thin surface oxide of Rh supported on ceria is proposed: CO is oxidized by the Rh-oxide film, which is subsequently reoxidized by a ceria surface O atom. The proposed mechanism is supported by in situ Raman spectroscopic investigations.

The Minnesota Nano Center’s Keller Hall facility includes an atomic layer deposition (ALD) machine that is capable of depositing uniform alumina (Al2O3), hafnium oxide (HfO2), silicon dioxide (SiO2), zinc oxide (ZnO), and titanium dioxide (TiO2). ALD works by building alternate layers on a film using two different precursor gases – one usually supplying the metallic atoms and water vapor (H2O) ...