In this paper, we demonstrate for the first time, a planar high voltage IGBT and freewheeling diode chip set with a blocking capability exceeding 8000V. The main aim is to show that a high performance IGBT can be achieved at this voltage level by implementing the “Soft-Punch-Through” (SPT) concept. Details of the IGBT and diode design and performance are presented. This includes, experimental r...

We introduce a hierarchical variant of the probabilistic roadmap method for motion planning. By recursively refining an initially sparse sampling in neighborhoods of the C-obstacle boundary, our algorithm generates a smaller roadmap that is more likely to find narrow passages than uniform sampling. We analyze the failure probability and computation time, relating them to path length, path clear...

because it is not possible to recognize the mechanism of cantilever failure in field studies, this type of common failure in riverbanks is investigated in the laboratory. for this purpose, two samples of susceptible soil that forms an overhanging block in riverbanks are used for physical model tests to determine their physical, chemical and mechanical characteristics. soil blocks of different d...

The ideal analysis of planar diodes in Temperature Limited Region is presented. Two types of relations are obtained for electric potential and electric field distributions one accurate but implicit and the other almost accurate but explicit.

New heterometallic hydride complexes that involve the addition of {Mg−H} and {Zn−H} bonds to group 10 transition metals (Pd, Pt) are reported. The side-on coordination a single Pd forms well-defined σ-complex. In contrast, three or Pt results in formation planar with subtly different geometries. We compare their structures through experiment (X-ray diffraction, neutron multinuclear NMR), comput...