Interest in atomic layer deposition (ALD) processes on polymer substrates is fueled by the increasing rise of organic electronics and polymer-based nanodevices. This study provides new insights into initial growth interface formation during plasma-enhanced ALD (PE-ALD) ZnO poly ethylene glycol dimethylacrylate (pEGDMA) 2-hydroxyethyl methacrylate (pHEMA) thin films, both deposited initiated che...

A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it po...

We demonstrate a selective atomic layer deposition of TiO2 thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the TiO2 thin film using atomic layer deposition. The selective atomic layer deposition is based on ...

We demonstrate the growth of ultra-thin AlN films on Si (111) and a GaN/sapphire (0001) substrate using atomic layer epitaxy in temperature range 360 to 420 °C. Transmission electron microscopy X-ray diffraction were used characterize interfaces, fine scale microstructure, crystalline quality thin films. Films deposited epitaxily with hexagonal structure, while substrate, film is epitaxial has ...

A series of microcrystalline silicon n2i2p solar cells has been deposited by very high frequency plasma enhanced chemical vapor deposition at various values of silane to hydrogen source gas ratio and on two different substrate types. Relationships between microstructure and electrical characteristics of these solar cells are investigated by transmission electron microscopy, atomic force microsc...

The dynamic roughening of amorphous silicon nitride growth front prepared by a plasma-enhanced chemical vapor deposition is presented. Morphology of the films grown at different substrate temperatures ~from 50 to 350 °C! for various lengths of deposition time was measured ex situ using atomic force microscopy. The dynamic scaling exponents are measured as a;0.77, b;0.40, and 1/z;0.28, and do no...

A systematic study has been carried out to quantify the effect of microcrystallite nucleation in the intrinsic layer of protocrystalline Si:H p-i-n solar cells prepared by rf plasma enhanced chemical vapor deposition (PECVD). Real-time spectroscopic ellipsometry (RTSE) results that have previously identified the transitions from amorphous to microcrystalline phase were confirmed with atomic for...