نتایج جستجو برای: post annealing
تعداد نتایج: 429673 فیلتر نتایج به سال:
Abstract The homogeneous formation of high-mobility oxide semiconductor thin films over large areas at low temperatures was accomplished by optimizing both the film process and low-temperature post-processing via plasma annealing. Increasing substrate-to-target distance ( D ST ) applied target voltage found to produce more uniform deposition. results field-effect mobility distributions IGZO TFT...
Abstract Structural and electrical properties of Al-doped Mg x Zn 1−x O films were improved by post-annealing with supplying vapor. The deposited on glass substrates a sol-gel method. dip-coated precursor solution dried hotplate at 270 °C for 10 min. This dip-coating drying process was repeated times, the obtained after calcination in air 500 1 h. as-grown post-annealed H 2 400 20 To supply zin...
We report investigations on the influences of post-deposition treatments on the performance of solution-processed methylammonium lead triiodide (CH₃NH₃PbI₃)-based planar solar cells. The prepared films were stored in pure N₂ at room temperature or annealed in pure O₂ at room temperature, 45°C, 65°C and 85°C for 12 hours prior to the deposition of the metal electrodes. It is found that annealing...
Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XP...
The microstructural evolution of Dy₂O₃-TiO₂ powder mixtures during ball milling and post-milled annealing was investigated using XRD, SEM, TEM, and DSC. At high ball-milling rotation speeds, the mixtures were fined, homogenized, nanocrystallized, and later completely amorphized, and the transformation of Dy₂O₃ from the cubic to the monoclinic crystal structure was observed. The amorphous transf...
A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage char...
Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition
We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected b...
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