Abstract Injected electrons and holes are captured into quantum wells with a non-vanishing time. Simulation results presented, showing that this in non-equilibrium of free bound carriers diode laser. Analysis an exemplary laser structure is used to show if the capture time too large, carrier densities regions adjacent well rise strongly beyond their values at threshold very high output power. T...

This theoretical work explores the carrier dynamical issues that must be confronted if the recent successes of the mid-infrared quantum cascade laserss1] are to be translated into longer wavelength devices. Whilst the small subband separations lead to a partial suppression of longitudinal optic (LO) phonon emission, which is the dominant non-radiative loss mechanism in quantum cascade lasers, i...

There are several challenges in the development of semiconductor lasers for the near mid-infrared region of 2-3 μm. Approaches being developed to produce lasers in this range include extending the wavelength of inter-band diode lasers which perform relatively well below ~2.5 μm. Such lasers are, however, strongly affected by increased optical losses and non-radiative Auger recombination which d...

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A theoretical model for calculation of the intrinsic linewidth of QCLs is built on the basis of the quantum Langevin approach. It differs from the traditional rate equation model in that the resonant tunneling and the dynamics of coherent interaction can be considered. Results show that the coupling strength and the dephasing rate associated with resonant tunneling strongly affect the linewidth...

We report terahertz quantum cascade lasers operating in pulsed mode at an emission frequency of 3 THz and up to a maximum temperature of 178 K. The improvement in the maximum operating temperature is achieved by using a three-quantum-well active region design with resonant-phonon depopulation and by utilizing copper, instead of gold, for the cladding material in the metal-metal waveguides.