Nonidentical multiple quantum wells (MQWs) had been widely used for broadening the emission or gain bandwidth of semiconductor optical amplifiers (SOAs). However, the carrier distribution among the MQWs is not uniform, leading to nonuniform gain contributed from different QWs. Thus using nonidentical MQWs for broadband purpose is not intuitively straightforward. Several factors need to be caref...

We report tunable deep-ultraviolet (DUV) emission over the 222–231nm range from 1–2 monolayer (ML) GaN quantum disks (QDs) grown in an AlN matrix. The linewidth of the emission were as narrow as >10nm at 5K. The disks were grown in modified Stranski–Krastanov (mSK) mode. High resolution scanning transmission electron microscopy (STEM) images confirmed insertion of 1–2 MLs of GaN between 3nm AlN...

In this work, the growth and properties of GaAsSbN single quantum wells are investigated. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy system with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of growth temperature on the optical properties of the layers. For reference low temperature pho...

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV...

GaAs/AlGaAs quantum wells ~QWs!, selectively disordered using an AlAs native oxide and thermal annealing technique, were studied using spectrally, spatially, and temporally resolved cathodoluminescence ~CL!. The spectral shift of the QW luminescence was determined as a function of annealing temperature in the oxide and nonoxide regions. Time-resolved CL was used to assess the impact of defects ...

We report a comparative study of carrier dynamics in semiconductor saturable absorber mirrors (SESAMs) containing InGaAs quantum wells and InGaAsN quantum wells (QWs). The static and dynamic reflectivity spectra were measured with a Fourier-transform-infraredspectrometer and a pump-probe setup, respectively. The influence of rapid thermal annealing (RTA) on carrier dynamics was studied. Due to ...

A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells QWs has been proposed in this paper. This approach utilizes contactless electroreflectance CER spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well QW into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning...

We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well ~QW! structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 mm, were deposited sequentially by shadow ma...

This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N,N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well...

We report studies of the free carrier and donor-bound FIR excitations of a confined electron gas in modulation doped GaAs/AlGaAs quantum wells (QW) as a function of the QW electron density. Applied pressure is used to tune the electron density via the G±X well±barrier crossover. As electrons are removed from the QWs, we observe successively the quenching of cyclotron resonance, the evolution of...