superlattice-like structures for phase change random access memory Chun Chia Tan, Luping Shi, Rong Zhao, Qiang Guo, Yi Li, Yi Yang, Tow Chong Chong, Jonathan A. Malen, Wee-Liat Ong, Tuviah E. Schlesinger, and James A. Bain Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 Department of Electrical and Computer Engi...

This paper presents results of an experiment in which Random Access Memory (RAM) diagrams were used to teach novice students C programming. Students were divided into two groups that were differently instructed. The control group was instructed in the traditional way while the experiment group was instructed with the aid of RAM diagrams employed throughout the course. Examination results from t...

A stochastic model of the resistive switching mechanism in bipolar oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode ...

As the Internet and the amount of data grows, the variability of data sizes grows too—from small MP3 tags to large VM images. With applications using increasingly more complex queries and larger data-sets, data access patterns have become more complex and randomized. Current storage systems focus on optimizing for one band of workloads at the expense of other workloads due to limitations in exi...

The gap between the cycle time of processor and the access time to memory go on being eminent. The processor performance increases about 60% by year because of reduction of cycle time and the rise in the number of instruction processed by cycle. Nevertheless, DRAM memories access time only reach an improvement about 10% by year although capacity is duplicate every one and a half year, according...

SCSI RDMA Protocol (SRP) is used to build high performance Storage Area Networks (SANs) over InfiniBand, or SRP-based IB-SANs for short. The I/O read performance is critical for many read dominant applications, such as multimedia, remote sensing, data backup, etc. However, if I/O accesses focus on a specific storage device of an IB-SAN, the local I/O performance of single device could become th...

Abstract: The applications in Android based smartphones generate unique IO requests; however, existing IO workload generators and trace capturing tools are designed to neither generate nor capture the IO requests of Android apps. In this paper, we introduce the Android storage performance analysis Tool (AndroStep) which is specifically designed for characterizing and analyzing the behavior of t...

Magnetic Random Access Memories (MRAMs) are “Spintronics” devices that store data in Magnetic Tunnel Junctions (MTJs) and have high data processing speed, low power consumption and high integration density compared with FLASH memories. Also, MRAM offers relative large Tunnel Magneto Resistance (TMR) at room temperature and it is compatible with Complementary Metal Oxide Semiconductor (CMOS) pro...