نتایج جستجو برای: resistivityproperties and photocurrent
تعداد نتایج: 16827693 فیلتر نتایج به سال:
Ž . Ž Three-dimensional multistructure assemblies consisting of gold nanoparticles and a sulfur-containing ruthenium II tris 2,2-bi. pyridine derivative were fabricated on an ITO electrode by their alternate self-assembling. Absorption spectra of the assemblies showed immobilization of the gold surface and the ruthenium complex. Broadening and red shift of the plasmon band were observed by incr...
An integrated 128x128 CMOS image sensor with programmable diffusion kernel for local brightness adaptation and contrast enhancement achieves local brightness adaptation by dividing each individual pixel photocurrent by the average photocurrent of the corresponding kernel. The chip is realized in 1μm standard CMOS. Pixel pitch is 47μm and total chip area is 86.4 mm2. Power dissipation is 20mW at...
Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflake...
Metal and dielectric nanoparticle scattering for improved optical absorption in photovoltaic devices
The influence of electromagnetic scattering by Au and silica nanoparticles placed atop silicon photovoltaic devices on absorption and photocurrent generation has been investigated. The nanoparticles produce substantial increases in power transmission into the semiconductor and consequently photocurrent response from 500 to 1000 nm. Increases in power conversion efficiency under simulated solar ...
We combine suspended carbon nanotube transistors with optical trapping techniques and scanning photocurrent microscopy to investigate the motion of suspended single-walled carbon nanotubes in solution. We study the movement of nanotubes by monitoring their photocurrent images and measure their thermal fluctuations by imaging microbeads that are tightly attached to nanotubes by single-stranded D...
Decatungstate acid (DA) was utilized to modify TiO2 in the photoanode of dye sensitized solar cells. The photo-induced electron lifetime was evidently improved and the recombination was greatly inhibited. DA can introduce levels of impurities and lower the Fermi level through a doping effect and thus increase the photocurrent. Moreover, the improved charge carrier density can be found through e...
We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behaviour upon variation of the radiation polarization state, wavelength, gate voltage, and temperature is studied. We present the microscopic and phenomenological theory of the photogalvanic effe...
Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonato...
We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000 nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals t...
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were m...
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