Interfaces between metal and semiconductor may be found almost everywhere in contemporary electronics. Often the metal is there just to serve as a contact to p-n junctions in the semiconductor. At other times, the metal-semiconductor interface itself performs essential electronic functions. Considerable scientific interest has been devoted to this latter situation since early in the century, as...

Schottky Collector Resonant Tunneling Diodes (SCRTDs) have potential for increased oscillator bandwidth, but may be prone to electron reflection at the semiconductor-metal interface of the Schottky collector. This reflection has been observed previously with in-situ MBE deposited collector metal, manifested as interference oscillations on the rising slope of the resonant current. This paper ext...

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

Abstract The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the re...

Using a metal-semiconductor-metal back-to-back Schottky contacted ZnO microwire device, we have demonstrated the piezoelectric effect on the output of a photocell. An externally applied strain produces a piezopotential in the microwire, which tunes the effective height of the Schottky barrier (SB) at the local contact, consequently changing the transport characteristics of the device. An equiva...

We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band line-up at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diamete...