The AC performance capabilities of Schottky-barrier carbon nanotube field-effect transistors are examined via simulations using a self-consistent Schrödinger-Poisson solver. It is shown that good high-frequency performance demands use of a small-bandgap nanotube, whereas good digitalswitching performance can be achieved with larger-bandgap tubes. For typical transistor geometries it is shown th...

This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with ...

We present a clear signature of the Schottky effect in a rf photoinjector using photons with energy lower than the Mg cathode work function. This signature is manifested by the shift in the rf phase angle for the onset of the detection of photoelectrons via single-photon absorption and allows for a reasonable estimate of the field enhancement factor. This is a viable method to generate an elect...

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhan...

The performance of carbon nanotube-based transistor is analyzed. The effect of geometrical parameters on the device performance is investigated as d tunnel. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity Our results sh...

We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a ...

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky c...

This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transm...

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-re...