A novel simple and compact multiple-path-switching device for multiple-valued decision diagram (MDD) is proposed and investigated theoretically in order to realize highperformance nanowire-network-based logic circuits with advanced functionality. The device is designed on multi-semiconductor-nanowire branches having a couple of size-controlled nanometer-scale Schottky wrap gates (WPGs). The dev...

Although a considerable amount of experimental and theoretical work has been devoted to nanoelectronic systems with molecular components, relatively little work has been done on molecular electronic devices on technologically relevant substrates such as silicon. Metal–molecule–semiconductor (MMS) studies have generally focused on structures in which the semiconductor barrier is dominant or trea...

In this paper, an analytical model for a vertical double implanted metal-oxide semiconductor (DIMOS) transistor structure in 4H-Silicon Carbide (SiC) is presented. Simulation for transport characteristics of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator MEDICI. A rigorous experimental testing and characterization is done on a 4H-SiC DIMOS tra...

Abstract Electron transporting, or n -type, semiconductors can serve as charge-transport materials, and are ideal for use in organic electronic devices. Boron-based small molecules have garnered immense research attention the heteroatom effectively alter structures leading to excellent photophysical electrochemical properties. A luminescent Schiff base ( E )-(4-((2-(2-hydroxybenzoyl)hydrazono)m...

Using the unique features of the electronic band structure of GaN(x)As(1-x) alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum effic...