– A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers, radiating two neighboring QDs, and tuned to blue detuning with respect to the resonant frequencies of individual excitons. The two-qubit phase gate can be ...

III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This th...

We analyze the excitons states in a quantum wire under intense laser radiation. Electrons and holes are confined by the parabolic potential of the quantum wire. An exactly solvable model is introduced for calculating the exciton binding energy, replacing the actual Coulomb interaction between the electron and the hole by a projective operator.

Control over electron-spin states, such as coherent manipulation, filtering and measurement promises access to new technologies in conventional as well as in quantum computation and quantum communication. In this paper, we review recent theoretical proposal of using electron spins in quantum confined structures as qubits. We also present a theoretical proposal for testing Bell’s inequality in n...

By placing changeable nanofabricated structures (wires, dots, etc.) on an atom mirror one can design guiding and trapping potentials for atoms. These potentials are similar to the electrostatic potentials which trap and guide electrons in semiconductor quantum devices like quantum wires and quantum dots. This technique will allow the fabrication of nanoscale atom optical devices. PACS. 03.75.Be...

A noninteracting quantum-dot array side-coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fou...

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong o...

We investigate the evolution of the interaction of the magnetoplasmon resonance with the harmonics of the cyclotron resonance as the confinement of an electron gas in a quantum wire increasingly deviates from the parabolic case. The occurrence of the Bernstein modes is observed in a time-dependent Hartree model of a two-dimensional electron gas in a single quantum wire.

We investigate the influence of electron-phonon interactions on the DCconductance Γ of a quantum wire in the limit of one occupied subband. At zero temperature, a Tomonaga-Luttinger-like renormalization of Γ to a value slightly larger than 2e2/h is calculated for a realistic quantum wire model. PACS: 72.10 Di, 72.15 Nj Typeset using REVTEX 1