Related Articles Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films J. Appl. Phys. 112, 074113 (2012) In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard xray photoelectron spectroscopy Appl. Phys. Lett. 101, 143501 (2012) Disorder induced semiconductor to metal transitio...

In this paper, a novel piezoresistive accelerometer based on the piezoresistive effect of GaAs/Al0.4Ga0.6As thin films was designed. The piezoresistive accelerometer contains four suspended flexural beams and a central proof mass configuration. The piezoresistive effect of a piezoresistor or thin film was used to make a resistor changing the output that is proportional to applied acceleration. ...

In order to overcome the low utilization ratio of solar light and high electron-hole pair recombination rate of TiO2, the triangular Ag nanoparticle island is covered on the surface of the TiO2 thin film. Enhancement of the photocatalytic activity of the Ag/TiO2 nanocomposite system is observed. The increase of electron-hole pair generation is caused by the enhanced near-field amplitudes of loc...

Abstract: Different thickness of Cu2S thin films were prepared by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Cu2S has direct band gap energy and indirect band gap energy at 1.2eV and 1.8 eV respectively. This paper presents the analysis of structural and optical properties of the Cu2S thin film by X-ray diffractometer (XRD) and UV-Vis-NIR Spectrophotomet...

titanium nitride-copper (tin-cu) nanocomposite films were deposited onto stainless steel substrate using hollow cathode discharge ion plating technique. the influence of cu content in the range of 2-7 at.% on the microstructure, morphology and mechanical properties of deposited films were investigated. structural properties of the films were studied by x-ray diffraction pattern. topography of t...

This work unravels the device characteristics, interface and band offset properties of Cu2ZnGeSe4 (CZGSe), a promising earth-abundant non-toxic semiconductor material for thin-film solar cell applications.

A double helicenic benzothieno–benzothiophene derivative, showing homochiral layers of MM and PP enantiomers in the single crystal phase, behaves as a p-type semiconductor thin-film OFET devices fabricated by both spin coating evaporation.

We find that Gd2O3 thin films strongly favor a ( 402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome ...

Related Articles Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxidesemiconductor field-effect transistors AIP Advances 2, 032126 (2012) Triisopropylsilylethynyl-functionalized anthradithiophene derivatives for solution processable organic field effect transistors Appl. Phys. Lett. 101, 043301 (2012) Electric field-induced scatt...