Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop...

AIM To determine the nature of the cellular infiltrate, alterations in cell adhesion molecules, and MHC II antigen expression in the rat retina following diode laser retinal photocoagulation. METHOD 20 normal Lister rats underwent diode laser photocoagulation of the retina. Frozen sections from eyes enucleated at 0, 1, 5, 13, and 33 days post laser were examined for T cells (R7.3), CD4 T cell...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 mm. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb block...

We report an investigation of electron conduction in oligophenyl based double barrier molecular device. We have carried out analytical calculations and numerical simulations on isolated molecules, consisting of aromatic π conjugated system made up of three phenyl rings separated by insulator groups −CH2−, −SiH2−, −GeH2− and −SnH2−. We show analytically as well as numerically that when the two i...

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...

A numerical scheme for the one dimensional stationary Schrödinger-Poisson model is described. The scheme is used to simulate a Resonant Tunneling Diode and provides an important reduction of the simulation time. The improvement is twofold. First the grid spacing in the position variable is made coarser by using oscillating interpolation functions derived from the WKB asymptotics. Then the discr...

Hydrogen is detected using a Pd/n-InP Schottky diode in which the elongated, very thin Pd electrode is of greater resistance than the underlying semiconductor substrate. Four-probe measurements of the device resistance, as a function of hydrogen concentration, are made by contacting only the Pd electrode, with a sensitivity of 1 ppm being achieved. On hydrogen exposure the device resistance dro...

Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent bias on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175 V. Furthermore, the measurements show...

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k p method is used to calculate the band structure for InGaN QW. The analysis indicates that the...