نتایج جستجو برای: si1
تعداد نتایج: 1017 فیلتر نتایج به سال:
SiGe technology is sincerely challenging III/V and II/VI technologies in the realm of high frequency electronics applications, for example optical fibre and mobile communications. In this paper a model of SiGe HBT with uniform impurity doping in the base for high frequency application is studied. The high frequency parameters are extracted with the help of simulated Zand Yparameters of two port...
The purpose of this article is to present, for the chemical vapour deposition process, mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected resu...
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
Based on our previous work on the recursive fermion system in the Cuntz algebra, it is shown that a nonlinear transformation group of the CAR fermion algebra is induced from a U(2) action on the Cuntz algebra O2p with an arbitrary positive integer p. In general, these nonlinear transformations are expressed in terms of finite polynomials in generators. Some Bogoliubov transformations are involv...
Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near-infrared range at room temperature. Heterojunction bipolar pho...
Let (W, I) be a finite Coxeter group. In the case where W is a Weyl group, Berenstein and Kazhdan in [BK] constructed a monoid structure on the set of all subsets of I using unipotent χ-linear bicrystals. In this paper, we will generalize this result to all types of finite Coxeter groups (including non-crystallographic types). Our approach is more elementary, based on some combinatorics of Coxe...
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