Mono- and disilicide of cobalt were obtained in the near-surface region diffusion-doped silicon by atoms. The thermally stimulated conductivity (TSC) was investigated. energy adhesion levels 0.32 eV determined for structures – doped - disilicide. influence illumination intensity on TSC curves is investigated it shown that does not affect shape curve weakly affects magnitude maximum current peak.

Refractory metal (RM) M5Si3 silicides are desirable intermetallics in metallic ultra-high temperature materials (UHTMs), owing to their creep properties and high Si content that benefits oxidation resistance. Of particular interest is the alloyed Nb5Si3 forms UHTMs with Nb addition. The choice of alloying elements type critical for achieving a balance or meeting property goal UHTM considered th...

The ternary silicide La2Li2Si3 was synthesized from the elements in a sealed niobium tube. La2Li2Si3 was characterized by powder and single crystal X-ray diffraction: Ce2Li2Ge3 type, Cmcm, a 1⁄4 450.03(8), b 1⁄4 1880.3(4), c 1⁄4 689.6(1) pm, wR2 1⁄4 0.0178, 597 F2 values, and 26 parameters. The La2Li2Si3 structure contains two crystallographically independent silicon sites, both in slightly dis...

Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...

The silicide Li13.7Rh8Si18.3 was synthesized from the elements in a sealed niobium ampoule at 1370 K followed by slow cooling. The sample was studied by powder and single-crystal X-ray diffraction. Li13.7Rh8Si18.3 crystallizes with a non-centrosymmetric occupancy variant of the R-phase structureMg32(Al, Zn)49: I23, a = 1306.9(2) pm,wR2 = 0.0447, 1286 F2 values, and 53 variables. Striking struct...

The alloying of Nb₅Si₃ modifies its properties. Actual compositions of (Nb,TM)₅X₃ silicides in developmental alloys, where X = Al + B + Ge + Si + Sn and TM is a transition and/or refractory metal, were used to calculate the composition weighted differences in electronegativity (Δχ) and an average valence electron concentration (VEC) and the solubility range of X to study the alloying and proper...