This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure ( 4 mbar), high plasma power and low substrate temperature ( 200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-t...

The effect of Helium (He) dilution on optical and photoelectric properties of hydrogenated amorphous silicon (a-Si:H) thin film samples prepared at substrate temperature of 75◦C with increased growth rate by plasma-enhanced chemical vapor deposition (PECVD) technique is studied using spectrophotometric (SP) and steady-state photocarrier grating techniques (SSPG). The values of refractive index,...

Monte Carlo Method is used to simulate a double layer gadolinium-amorphous silicon thermal neutron detector. The detector fabricated in pixel array configuration has various applications including neutron imaging. According to the simulation results, a detector consisting of a gadolinium (Gd) film with thickness of 2-4 ~m, sandwiched properly with two layers of sufficiently thick (-30 ?µm) hydr...

In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ESD events in amorphous silicon thin film transistors (a-Si:H TFT). It will be ,shown that, above an ESD degradation threshold voltage, deterioration of electrical characteristics sets in, and that above another ESD failure threshold voltage, dielectric breakdown occurs. Electrical simulations of...

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gat...

In this work we demonstrate optical trapping and manipulation of microparticles suspended in water due to laser-induced convection currents. Convection currents are generated due to laser light absorption in an hydrogenated amorphous silicon (a:Si-H) thin film. The particles are dragged towards the beam's center by the convection currents (Stokes drag force) allowing trapping with powers as low...

A protrusion electrode structure is proposed to dramatically lower the operation voltage of the emerging blue-phase liquid crystal displays BP-LCDs . Simulation results indicate that the generated horizontal electric field is not only strong but also penetrates deeply into the bulk LC layer. As a result, a low voltage 10 Vrms and reasonably high transmittance 70% BP-LCD can be achieved. This ap...

We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo83Si17 thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illumination, corresponding to a maximum system detection efficiency of appr...

Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate @Hf(NO3)4# . Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and uniform initiation of film growth has be...