In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can th...

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We present polarized emission from single hexagonal silicon–germanium (hex-SiGe) nanowires. To understand the nature of band-to-band hex-SiGe, we have performed photoluminescence spectroscopy to investigate polarization properties hex-SiGe core–shell observe a degree 0.2 0.32 perpendicular nanowire c-axis. Finite-difference time-domain simulations were influence dielectric contrast structures. ...

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compoun...

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We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and ...

Optimized experimental conditions of infrared p-polarized multiple-angle incidence resolution spectrometry (p-MAIRS) for the analysis of ultrathin films on glass have been explored. When the original MAIRS technique is employed for thin-film analysis on a substrate of germanium or silicon, which exhibits a high refractive index, an established experimental condition without optimization can be ...