Silicon carbide represents a class of semiconductors, due to its polytypism. Besides its properties of interest for semiconductor devices, sometimes better than silicon and diamond, it is supposed to have a good radiation tolerance. In the present work, the bulk degradation of SiC in hadron fields (pions and protons), in the energy range between 100 MeV and 10 GeV has been estimated theoretical...

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typic...

In this work, we study the modification of hydrogenated diamond films deposited on silicon resulting from its exposure to DBr followed by an annealing above 600 K, using high resolution electron energy loss spectroscopy (HREELS). This procedure results in silicon carbide SiC formation within the diamond film, as evidenced by the observation of a loss peak at 117 meV and its first harmonic at 23...

After the pioneering investigations into graphene-based electronics at Georgia Tech, great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for large scale applications, it also has become an important material for fundamental two-dimensional electron gas physics. It was long known that graphene...

With the increase in use of power electronics in transmission and distribution applications there is a growing demand for cost effective and highly efficient converters. Most of the utility applications have power electronics integrated in the system to improve the efficiency and functionality of the existing system. The development of semiconductor devices is vital for the growth of power elec...