Silicon carbide (SiC) exhibits excellent material properties attractive for broad applications. We demonstrate the first SiC optomechanical microresonators that integrate high mechanical frequency, high mechanical quality, and high optical quality into a single device. The radial-breathing mechanical mode has a mechanical frequency up to 1.69 GHz with a mechanical Q around 5500 in atmosphere, w...

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the g...

A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiOxNy) and silicon dioxide (SiO2), respectively. Th...

We present a computational method for three-dimensional tetrahedral mesh refinement according to the demands of oxidation simulation. The main focus lies on two major problems. First, the start-up condition of oxidation claims an initial mesh preparation which is done by the so called Laplace refinement, second the transient conversion of silicon (Si) to silicon dioxide (SiO2) forces a high spa...

Macroporous silicon membranes are fabricated whose pores are terminated with 60 nm thin silicon dioxide shells. The transmission of electrons with energies of 5 kV–25 kV through these membranes was investigated reaching a maximum of 22% for 25 kV. Furthermore, the transmission of electromagnetic radiation ranging from the far-infrared to the x-ray region was determined. The results suggest the ...

This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were m...

This study proposes new microcantilever designs in slotted step configuration to improve the S/N ratio of surface stress-based sensors used in physical, chemical, biochemical and biosensor applications. The cantilevers are made of silicon dioxide with a u-shaped silicon piezoresistor in p-doped. The cantilever step length and piezoresistor length is varied along with the operating voltage to ch...

In the wake of the increasing importance of organic electronics, a more in-depth understanding of the early stages of organic film growth is indispensable. In this review a survey of several rod-like and plate-like organic molecules (p-quaterphenyl, p-sexiphenyl, hexaazatriphenylene-hexacarbonitrile (HATCN), rubicene, indigo) deposited on various application relevant substrates (gold, silver, m...

A detailed procedure is presented for fabrication of free-standing silicon photonic devices that accurately reproduces design dimensions while minimizing surface roughness. By reducing charging effects during inductively coupled-plasma reactive ion etching, undercutting in small, high-aspect ratio openings is reduced. Slot structures with a width as small as 40 nm and an aspect ratio of 5.5:1 c...

The scattering of terahertz radiation on a graphene-based nano-patch antenna is numerically analyzed. The extinction cross section of the nano-antenna supported by silicon and silicon dioxide substrates of different thickness are calculated. Scattering resonances in the terahertz band are identified as Fabry–Perot resonances of surface plasmon polaritons supported by the graphene film. A strong...