The development and optimization of Silicon technology has been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the International Technology Roadmap for Semiconductor (ITRS). With the trend of scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistor as Moore’s Law [2] requires replacement of conventional silicon dioxide layer with the ...

Fourier transform infrared (FTIR) spectroscopy combined with a long-path collisional cooling cell was used to investigate the temporal evolution of CO2 nanoparticles and binary H2O/CO2 nanocomposites in the aerosol phase at 80 K. The experimental conditions for the formation of different CO2 particle shapes as slab, shell, sphere, cube, and needle have been studied by comparison with calculated...

one of the most important ingredients responsible for the success of integrated silicon technology is the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), and a major reason for its success is the MOSFET's scalability. Although the industry uses silicon and silicon dioxide in the electronic devices, it can be used for opto-electronic devices as well due to formation of fractal oxide ...

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer fro...

A versatile fabrication process that allows users to quickly construct micromachined structures using a one metal, one silicon dioxide film stack on a silicon wafer is presented in this technical report. This simplified process, called Mock CMOS, (a) starts from pre-processed wafers and requires only one photolithography step, (b) provides a conductor material for actuating electrostatic and th...

Hopping transport through heterostructure solar cells based on B-doped crystalline silicon wafers with highly P-doped hydrogenated amorphous silicon emitters with different thicknesses is investigated at T = 10 K with pulsed electrically detected magnetic resonance. The measurements show that transport is dominated by conduction band tail states (g ≈ 2.0046) with a distribution of their mutual ...

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation tr...

Methanol catalysis meets chemistry under confined conditions. Methanol is regarded as one of the most important future energy sources. ZnO/Cu composite materials are very effective in heterogeneous catalysis for methanol production due to the so-called strong metal-support interaction effect (SMSI). Therefore, materials of superior structural design potentially representing model systems for he...