نتایج جستجو برای: silicon nitride
تعداد نتایج: 92082 فیلتر نتایج به سال:
Tensile creep studies were carried out to evaluate the creep performance of AS800 silicon nitride samples extracted from the surface and bulk regions of as-processed billets at 1350°C in air. The objective of this study was to understand the creep properties of the silicon nitride in the as-processed surface region and determine if they are comparable to those obtained from the bulk region. The...
The room temperature photoluminescence from Ge nanopillars has been extended from 1.6 μm to above 2.25 μm wavelength through the application of tensile stress from silicon nitride stressors deposited by inductively-coupled-plasma plasma-enhanced chemical-vapour-deposition. Photoluminescence measurements demonstrate biaxial equivalent tensile strains of up to ∼ 1.35% in square topped nanopillars...
We demonstrate the generation of counter-rotating cavity solitons in a silicon nitride microresonator using a fixed, single-frequency laser. We demonstrate a dual three-soliton state with a difference in the repetition rates of the soliton trains that can be tuned by varying the ratio of pump powers in the two directions. Such a system enables a highly compact, tunable dual comb source that can...
UNLABELLED Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PEDOT PSS) hybrid solar cell, enabling an im...
In this study we examined the passive biocompatibility of a three-dimensional microelectrode array (MEA), designed to be coupled to organotypic brain slice cultures for multisite recording of electrophysiological signals. Hippocampal (and corticostriatal) brain slices from 1-week-old (and newborn) rats were grown for 4-8 weeks on the perforated silicon chips with silicon nitride surfaces and 40...
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
In this study, we investigate the reflectance property of the cylinder, right circular cone, and square pyramid shapes of silicon nitride (Si3N4) subwavelength structure (SWS) with respect to different designing parameters. In terms of three critical factors, the reflectance for physical characteristics of wavelength dependence, the reflected power density for real power reflection applied on s...
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