Label-free photonic biosensors fabricated on silicon-on-insulator (SOI) can provide compact size, high evanescent field strength at the silicon waveguide surface, and volume fabrication potential. However, due to the large thermo optic coefficient of water-based biosamples, the sensors are temperature-sensitive. Consequently, active temperature control is usually used. However, for low cost app...

Silicon-on-insulator (S01) technology exhibits three main advantages over bulk silicon technology for use in radiation environments. (1) SOI devices are immune to Iatchup, (2)the volume of the sensitive region (body) and hence total charge collection per transient irradiation is much reduced in SOI devices and (3) the insulating layer blocks charge collection from the substrate (i.e., no fimnel...

In this article, a novel concept is introduced to improve the Radio Frequency (RF) linearity of Partially-Depleted (PD) Silicon-On-Insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free cir...

Device Fabrication All devices were prepared on silicon-on-insulator (SOI; Soitec Inc.) wafers. The SOI wafers were pre-doped by thermally diffusing spin-on-dopant (Boron A; Filmtronics, Inc.) with rapid thermal annealing (RTA) at 820C for 3 minutes. The resulting sheet resistance indicates a doping concentration of 2x10 cm, with the thickness of the silicon epilayer determined by atomic force...

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling wave resonator, and, thus, provides separation of the through and drop port transmission from the input port. The device is on a 3×3  mm chip fabricated in an advanced microelectronics silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) process...

We have fabricated silicon-on-insulator ~SOI! transistors with an ultrathin Si channel of ;5 nm, tunneling gate oxide of ;1 nm, and 100 nm gate length. In addition to good transistor characteristics, these same devices exhibit additional functionality at low temperature. The drain current ID exhibits steps near the turn-on threshold voltage as a function of the backgate VBG bias on the substrat...

A novel fabrication strategy has produced optical microring-resonator-based thermal detectors. The detectors are based on the thermo-optic effect and are thermally isolated from a silicon wafer substrate so as to maximize the temperature excursion for a given amount of incident radiation and minimize the impact of thermal phonon noise. The combination of high-Q, thermal isolation, and lack of J...

MEMS is the acronym for Micro Electro Mechanical Systems. Micromachining has potential applications for large area image sensors and displays, but conventional MEMS technology, based on crystalline silicon wafers cannot be used. Instead, large area devices use deposited films on glass substrates. This presents many challenges for MEMS, both as regards materials for micro-machined structures and...

Silicon-on-insulator (SOI) technology has sparked advances in semiconductor and MEMs manufacturing and revolutionized our ability to study phonon transport phenomena by providing single-crystal silicon layers with thickness down to a few tens of nanometers. These nearly perfect crystalline silicon layers are an ideal platform for studying ballistic phonon transport and the coupling of boundary ...

A small footprint integrated Membrane InP Switch (MIPS) on Silicon-On-Insulator (SOI) is demonstrated for use in all-optical packet switching. The device consists of an optically pumped III-V membrane waveguide of only 100 nm thick, coupled to the underlying SOI waveguide circuit. Because of its limited thickness, the optical confinement in the active layers is maximized, allowing for high exti...