نتایج جستجو برای: silicon on insulator technology
تعداد نتایج: 8634169 فیلتر نتایج به سال:
Light emitting pn-diodes were fabricated on a 5.8 mm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of the Si device layer was reduced to 1.3 mm, corresponding to a 4l-cavity for l 1⁄4 1150 nm light. Electroluminescence spectra of these low Q-factor microcavities are presented. Addition of Si/SiO2 Bragg ...
It is very important to study variability of nanodevices because the inability to produce large amounts of identical nanostructures is eventually a bottleneck for any application. In fact variability is already a major concern for CMOS circuits. In this work we report on the variability of dozens of silicon single-electron transistors (SETs). At room temperature their variability is compared wi...
In this paper, a near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed. The electric field and electrostatic potential in this structure are modified by the gradual buried-oxide thickness increase. The modification includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI...
Wepropose an accurate clocked single-spin source for ac-spintronic applications. Our device consists of a superconducting island covered by a ferromagnetic insulator (FI) layer throughwhich it is coupled to superconducting leads. Single-particle transfer relies on the energy gaps and the islandʼs charging energy, and is enabled by a bias and a time-periodic gate voltage. Accurate spin transfer ...
A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage i...
Silicon-on-insulator (SOI) wafers are nowadays being prominently used for the manufacture of new generation semiconductor devices. In order to maximize the device yield, the device industry is seeking SOI wafers that meet very stringent wafer specifications such as very low wafer bow and warp. An SOI wafer can undergo severe process-induced stresses during its manufacture leading to significant...
Double gate MOSFET is widely used for sub-50nm technology of transistor design .They have immunity to short channel effects, reduced leakage current and high scaling potential. The single gate Silicon–on-insulator (SOI) devices give improved circuit speed and power consumption .But as the transistor size is reduced the close proximity between source and drain reduces the ability of the gate ele...
SOI (silicon-on-insulator) technology suffers from a number of floating body effects, most notably parasitic bipolar and history effects. These are influenced by the rapidly increasing gate tunneling current caused by an ultra-thin gate oxide, even at scaled VDDs [8]. This paper analyzes these effects in detail and proposes a number of novel circuit styles to minimize them. Simulation results a...
This paper reports a microelectromechanical systems (MEMS) resonant varifocal mirror integrated with piezoresistive focus sensor. The varifocal mirror is driven electrostatically at a resonant frequency of a mirror plate to obtain the wide scanning range of a focal length. A piezoresistor is used to monitor the focal length of the varifocal mirror. The device is made of a silicon-on-insulator (...
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