Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very recently. Many of the results are measured on samples with significant bulk conduction, such as metallic Bi2Se3, where it can be challenging to separate the sur...

Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method which provides two-dimensional cross-sectional images of the spin polarization in GaAs. While the distribution of the spin polarization below the injecting contact is nearly uniform for (Ga,Mn)As, a strong confinement near the contact edge is observed for Fe and FeCo. The spin polarization in GaAs ch...

The classical method to increase the nuclear spin polarization is the "solid effect" mainly developed by Abragam and Jeffries, where the Boltzmann polarization of unpaired electrons present in the sample is transferred to the nuclei by inducing forbidden transitions which flip one nucleus and one electron simultaneously (1,2). A different method is the optical nuclear polarization (ONP) which w...

In conventional polarized beam experiments, the projectile is incident upon a target external to the accelerator. In this case, the direction of the polarization vector of the beam can be reversed at the polarized ion source without any loss in luminosity. In the Cooler, however, the polarization of the stored beam has been given by the polarization direction during injection. Reversal of the p...

Using a first-principles Green’s function technique, we study spin-dependent tunneling in two model realizations of 111 fcc Co/Al2O3/Co tunnel junctions assuming O-terminated crystalline epitaxy in the corundum structure. For the first model, which includes 3 O atoms at the interface, the tunneling current is polarized negatively, just as for the clean Co surface. The second model contains addi...

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-r...

The surface electronic states of W(110)-(1 x 1)H have been measured using spin- and angle-resolved photoemission. We directly demonstrate that the surface bands are both split and spin-polarized by the spin-orbit interaction in association with the loss of inversion symmetry near a surface. We observe 100% spin polarization of the surface states, with the spins aligned in the plane of the surfa...

We report an extensive theoretical analysis of point-contact Andreev reflection data available in the literature on ferromagnetic CrO2. We find that the spectra can be well understood within a model of fully spin-polarized bands in CrO2 together with spin-active scattering at the contact. This is in contrast to analysis of the data within extended Blonder-Tinkham-Klapwijk models, which lead to ...

The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to extend the functionalities of spintronics and valleytronics devices. The achievement of spin-coupled valley polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and inequivalent valleys has been demonstrated theoretically and by optical experiments. However,...

We used spatiallyand time-resolved Kerr rotation microscopy to show that in lateral wire-like structures, based on a modulation-doped GaAs-AlGaAs quantum well, an optically initialized spin polarization can be deterministically transferred to specific lateral positions, employing the persistent spin helix (PSH). To this end, we show that confinement in two directions leads to a strong enhanceme...