Hydrogen silsesquioxane (HSQ) has been used as e-beam resist and ion milling mask in the fabrication of spin valve devices. The excellent performance of HSQ in patterning nanometer size features and corresponding procedures such as chemical mechanical polishing (CMP) make the HSQ-based process a reliable and economic way to make nanomagnetic devices.

Magnetic spin valve devices enable the design of logic and memory elements that are suitable for use when constructing digital systems. A master-slave flip-flop design is proposed that can be clocked using an externally applied global magnetic field. With an external global clock, the digital system no longer needs to deliver the clock on-chip, thereby eliminating the need for a clock distribut...

A mesoscopic spin valve is used to determine the dynamic spin polarization of electrons tunneling out of and into ferromagnetic (FM) transition metals at finite voltages. The dynamic polarization of electrons tunneling out of the FM slowly decreases with increasing bias but drops faster and even inverts with voltage when electrons tunnel into it. A free-electron model shows that in the former c...

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric ...