نتایج جستجو برای: sputtering
تعداد نتایج: 8003 فیلتر نتایج به سال:
Using a combinatorial approach, Cr, Al and C have been deposited onto sapphire wafer substrates by High Power Impulse Magnetron Sputtering (HiPIMS) and DC magnetron sputtering. X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and X-ray diffraction were employed to determine the composition and microstructure of the coatings and confirm the presence of the Cr2AlC MAX phase within ...
Instabilities caused during the erosion of a surface by an ion beam can lead to the formation of self-organized patterns of nanostructures. Understanding the self-organization process requires not only the in-situ characterization of ensemble averaged properties but also probing the dynamics. This can be done with the use of coherent X-rays and analyzing the temporal correlations of the scatter...
Zn depletion by energetic negative oxygen ion re-sputtering is one of the main factors influencing optoelectronic properties aluminum doped zinc oxide thin films deposited RF magnetron sputtering.
We study electron emission and sputtering during irradiation of amorphous water ice at 60 K by HC, DC, He+, Li+, Be+, B+, C+, N+, O+, F+, and Ne+ ions in the energy range from 10 to 100 keV. We find that for constant velocity (5 keV/amu) ions the dependence of the sputtering yields with projectile atomic number Z is proportional to the square of the Z-dependence of the electronic stopping power...
This paper proposes a two-step radio frequency (RF) sputtering process to forma ZnO film for pyroelectric sensors. It is shown that the two-step sputtering process with alower power step followed by a higher power step can significantly improve the voltageresponsivity of the ZnO pyroelectric sensor. The improvement is attributed mainly to theformation of ZnO film with a strongly preferred orien...
We report the experimental observation of room-temperature perpendicular magnetic anisotropy in Ni/Pt multilayers having 7–26 Å Ni and 2.3–4.6 Å Pt layer thicknesses, prepared by dc magnetron sputtering on glass substrates at 7 mTorr Ar sputtering pressure. Perpendicular magnetic anisotropy was found to be sensitively dependent on both Niand Pt-layer thicknesses, and a maximum anisotropy energy...
When self-sputtering is driven far above the runaway threshold voltage, energetic electrons are made available to produce "excess plasma" far from the magnetron target. Ionization balance considerations show that the secondary electrons deliver the necessary energy to the "remote" zone. Thereby, such a system can be an extraordinarily prolific generator of usable metal ions. Contrary to other k...
Water-soluble luminescent AuNPs of 1.3 ± 0.3 nm in diameter with a large Stokes shift were facilely synthesized by a new molten matrix sputtering (MMS) method.
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