The influence of annealing time on temperature range of martensitic phase transition (ΔT(A-M)), thermal hysteresis (ΔThys), magnetic hysteresis loss (ΔMhys), magnetic entropy change (ΔS(M)) and relative refrigeration capacity (RC) of the Mn-rich Ni43Mn46Sn11 melt spun ribbons have been systematically studied. By optimal annealing, an extremely large ΔS(M) of 43.2 J.kg(-1)K(-1) and a maximum RC ...

Angular dependence of x-ray fluorescence techniques have been employed to investigate the effects of thermal annealing at various temperatures ranging from 340 to 387 °C on a series of CdTe/CdS heterojunctions. Changes in depth profiles of Te and Cd atoms in the CdS layer as a result of heat treatment has been observed. A simple model is proposed for comparison of the ratio of Te Ka to Cd Ka fl...

The development of cost-effective and low-temperature synthesis techniques for the growth of highquality zinc oxide thin films is paramount for fabrication of ZnO-based optoelectronic devices, especially ultraviolet (UV)-light-emitting diodes, lasers and detectors. We demonstrate that the properties, especially UV emission, observed at room temperature, of electrodeposited ZnO thin films from c...

It has been shown that gallium antimonide (GaSb)-based dilute-nitrides display improved photoluminescence (PL) with in situ annealing in the molecular beam epitaxy (MBE) growth chamber under a Sb ambient. This improvement in luminescence efficiency translates into improved performance of optoelectronic devices, such as lasers, where this will lead to a reduction in threshold current densities. ...

In this paper, we systematically investigate three different routes of synthesizing 2% Na-doped PbTe after melting the elements: (i) quenching followed by hot-pressing (QH), (ii) annealing followed by hot-pressing, and (iii) quenching and annealing followed by hot-pressing. We found that the thermoelectric figure of merit, zT, strongly depends on the synthesis condition and that its value can b...

electrical, structural and morphological properties of ni silicide films formed in ni(pt 4at.% )/si(100) and ni0.6si0.4(pt4at.% )/si(100) structures at various annealing temperatures ranging from 200 to 1000 oc were studied. the ni(pt) and ni0.6si0.4(pt) films with thickness of 15 and 25 nm were deposited by rf magnetron co-sputtering method, respectively.  the annealing process of the structur...