Bipolar resistive switching is demonstrated in the amorphous oxide semiconductor zinc–tin-oxide (ZTO). A gradual forming process produces improved switching uniformity. Al/ZTO/Pt crossbar devices show switching ratios greater than 10, long retention times, and good endurance. The resistive switching in these devices is consistent with a combined filamentary/interfacial mechanism. Overall, ZTO s...

Thin films of tin oxide were deposited by electron beam evaporation. The effects of the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin films were investigated. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy All the films were found to be amorphous. The current-voltage characteristic of the sensor in air has shown that sem...

zno thin film of 80 nm thickness was deposited by the sol-gel spin coating method on sio2/si substrate and subsequently post-annealed at 500°c with a flow of oxygen for 60 min. crystallographic structure of the sample was characterized by x-ray diffraction (xrd) method while a field emission scanning electron microscope (fesem) was used to investigate the surface physical morphology and chemica...

The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO(2)) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO(2) were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical ca...

Luisa Petti, Niko Münzenrieder, 2 Christian Vogt, Hendrik Faber, Lars Büthe, Giuseppe Cantarella, Francesca Bottacchi, Thomas D. Anthopoulos, and Gerhard Tröster Electronics Laboratory, Swiss Federal Institute of Technology, Zürich, Switzerland Sensor Technology Research Centre, University of Sussex, Falmer, United Kingdom Department of Physics and Centre for Plastic Electronics, Imperial Colle...

Activation Energy is an important feature in determining the formation of ohmic contact on a semiconducting material. Activation energy depends on workfunction of the semiconductor. Thus, there is a good co-relation between the ohmicity, activation energy and workfunction. In this work, Cadmium Sulphide (CdS) thin film of 2 μm thickness is the semiconducting material fabricated using Chemical V...

The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a...

Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series of phosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate, and (9-anthracene)phosphonate SAMs were examined. Significant improvements in th...

Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconduc...

Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors. For epitaxial cobalt and nickel disilicide we find exceptionally uniform interfaces with a significant dependence of the schottky barrier height on interface structure. For epitaxial alkaline-earth fluorides...