This paper proposes the Asymmetric Double Gate Silicon Substrate HEMT (ADG-Si-HEMT) to study carrier concentration and intrinsic small signal parameters of InSb/AlInSb silicon wafer DG-HEMT device. The HEMTs work as a three-port system device is named when top bottom gates are biased with different gate voltages. position quasi-Fermi energy levels (Ef) used investigate modulation back-channel c...

This paper describes implementation of CMOS based linear and non-linear analog circuitsusing operational trans conductance amplifier as the basic element. These circuits have their applications in communication signal processing areas. In this work PSPICE is used for simulation various circuits. The corresponding results are presented.