نتایج جستجو برای: transition metal dichalcogenide
تعداد نتایج: 436887 فیلتر نتایج به سال:
Abstract Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized spintronics and valleytronics. Although current studies concentrate the monolayer form due to explicitly broken inversion symmetry direct band gap, bulk materials also hold capability of carrying spin valley curren...
Abstract The emergence of various exciton-related effects in transition metal dichalcogenides (TMDC) and their heterostructures has inspired a significant number studies brought forth several possible applications. Often, standard photoluminescence (PL) with microscale lateral resolution is utilized to identify characterize these excitonic phenomena, including interlayer excitons (IEXs). We stu...
Abstract In two-dimensional materials with the many-body quantum states, edges become especially significant for realizing a host of physical phenomena and potential applications in nanodevices. Here, we report successful construction ultra-flat monolayer 1H-phase niobium diselenide (NbSe 2 ) atomically sharp zigzag edges. Our scanning tunneling microscopy spectroscopy measurements reveal that ...
This commmunication presents a study of atomic layer deposition of Al2O3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al2O3 on pristine chemical vapour deposited MoS2 and WS2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no depositio...
The charge density wave (CDW) is usually associated with Fermi surfaces nesting. We here report a new CDW mechanism discovered in a 2H-structured transition metal dichalcogenide, where the two essential ingredients of the CDW are realized in very anomalous ways due to the strong-coupling nature of the electronic structure. Namely, the CDW gap is only partially open, and charge density wave vect...
Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique optoelectronic properties. Here, we report that strain gradients, either unintentionally induced or generated by substrate patterning, result in spatially and spectrally isolated quantum emitters in mono- and bilayer WSe2. By correlating localized excitons with local...
The transition metal dichalcogenide 1T-TaS2 is a layered material exhibiting charge density waves. Based on angleresolved photoemission experiments mapping spectral weight at the Fermi surface and density functional theory calculations we discuss possible mechanisms involved with the creation of charge density waves. At first the flat parts of the elliptically shaped Fermi surface appear to pla...
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